TSMC announced that it is starting trial production of its gate-all-around 2 nm technology, to be used in the Apple iPhone 17 lineup. Check out our first surrounding gate sub-5nm silicon nanowire transistor, published in 2006 (J. Goldberger et al., Nano Lett. 6, 973, 2006), a prototypical device concept for the Gate-All-Around 3nm/2nm nanowire/nanoribbon transistor technology.
Article link: Econotimes