As the microelectronics industry moves to adopt gate-all-around transistor designs in next-generation smartphones, groundbreaking research at Berkeley Lab demonstrated an innovative approach to creating these advanced structures nearly 20 years ago.
The technology – called gate-all-around field-effect transistors (GAA-FET) – represents a key architectural advance for packing billions more transistors into the tiny microchips that are found in smartphones and laptops. The “gate-all-around” design enhances control over the transistor channel, leading to better performance and lower power consumption. While industry is now implementing GAA-FET through traditional top-down fabrication, Berkeley Lab’s early bottom-up approach showed the potential of this geometry using chemical synthesis to achieve these complex structures.
Read the full article here.
Original title: Compute This: Six Ways Berkeley Lab Is Shaping the Future of Microelectronics
Author: Theresa Duque and Alison Hatt
Link: Berkeley Lab News